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Semikron SEMIX503GD126HDC

Semikron SEMIX503GD126HDC
Manufacturer
Semikron
Part number
SEMIX503GD126HDC
Country
Germany
Sale of any product from the Semikron catalog at competitive prices

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Specifications SEMIX503GD126HDC

Product Attribute Attribute Value Search
Channel Type N
Collector Current 466 A
Collector to Emitter Shorted Voltage 1200 V
Configuration Array
Continuous Collector Current 466 A
Dimensions 149.5 x 163 x 17 mm
Energy Rating 72 mJ
Gate Capacitance 21.6 nF
Gate to Emitter Voltage 20 V
Length 5.885" (149.5mm)
Minimum Operating Temperature -40 °C
Mounting Type Screw
Number of Pins 29
Package Type SEMIX 33c
Polarity N-Channel
Primary Type Si
Product Header Trench N-Channel IGBT Module
Resistance, Thermal, Junction to Case 0.08 K/W
Series IGBT Series
Temperature Operating Range -40 to +150 °C
Transistor Type IGBT
Type Trench
Voltage, Collector to Emitter, Saturation 1.7 V
Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)
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