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Semikron SKM600GB126D

Semikron SKM600GB126D
Manufacturer
Semikron
Part number
SKM600GB126D
Country
Germany
Sale of any product from the Semikron catalog at competitive prices

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Specifications SKM600GB126D

Product Attribute Attribute Value Search
Channel Type N
Collector Current 660 A
Collector to Emitter Resistance 1.8 Milliohms (Typ.)
Collector to Emitter Shorted Voltage 1200 V
Collector to Emitter Voltage 1200 V
Configuration Dual
Continuous Collector Current 660 A
Dimensions 106.4 x 61.4 x 30.5 mm
Energy Rating 103 mJ
Gate Capacitance 32 nF
Gate to Emitter Voltage ±20 V
Height 1.201" (30.5mm)
Input Capacitance 32 nF (Typ.)
Length 4.188" (106.4mm)
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Mounting Type Screw
Number of Pins 7
Package Type D 56
Polarity N-Channel
Primary Type Si
Product Header Trench N-Channel IGBT Module
Resistance, Thermal, Junction to Case 0.055 K/W
Series IGBT Series
Temperature Operating Range -40 to +150 °C
Transistor Type IGBT
Turn Off Time 670 ns (Typ.)
Turn On Time 290 ns (Typ.)
Type Trench
Width 2.417" (61.4mm)
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