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Semikron SKM100GB063D

Semikron SKM100GB063D
Manufacturer
Semikron
Part number
SKM100GB063D
Country
Germany
Sale of any product from the Semikron catalog at competitive prices

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Specifications SKM100GB063D

Product Attribute Attribute Value Search
Channel Type N
Collector Current 130 A
Collector to Emitter Shorted Voltage 600 V
Collector to Emitter Voltage 600 V
Configuration Dual
Continuous Collector Current 130 A
Energy Rating 7 mJ
Fall Time 35 nS (Typ.)
Gate Capacitance 5.6 nF
Height 1.201" (30.5mm)
Maximum Operating Temperature +150 °C
Mounting Type Screw
Operating and Storage Temperature -40 to 150 °C
Package Type Semitrans2
Polarity N-Channel
Primary Type Si
Product Header Superfast N-Channel IGBT Module
Resistance, Thermal, Junction to Case 0.27 K/W
Rise Time 40 nS (Typ.)
Series IGBT Series
Temperature Operating Range -40 to +150 °C
Transistor Type IGBT
Type Standard
Voltage, Breakdown, Collector to Emitter 600 V
Voltage, Saturation, Collector to Emitter 600 V
Width 1.339" (34mm)
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