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Semikron SEMIX 202GB12T4S

Semikron SEMIX 202GB12T4S
Manufacturer
Semikron
Part number
SEMIX 202GB12T4S
Country
Germany
Sale of any product from the Semikron catalog at competitive prices

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Specifications SEMIX 202GB12T4S

Product Attribute Attribute Value Search
Channel Type N
Collector Current 314 A
Collector to Emitter Shorted Voltage 1200 V
Collector to Emitter Voltage 1200 V
Configuration Dual
Continuous Collector Current 314 A
Dimensions 116.5 x 61.5 x 17 mm
Energy Rating 43 mJ
Gate Capacitance 12.3 nF
Gate to Emitter Voltage 20 V
Height 0.669" (17mm)
Length 4.586" (116.5mm)
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
Mounting Type Screw
Number of Pins 16
Package Type SEMIX 2s
Polarity N-Channel
Primary Type Si
Product Header Trench N-Channel IGBT Module
Resistance, Thermal, Junction to Case 0.14 K/W
Series IGBT Series
Temperature Operating Range -40 to +175 °C
Type Trench
Width 2.421" (61.5mm)
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