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Semikron SEMIX353GB126HDS

Semikron SEMIX353GB126HDS
Manufacturer
Semikron
Part number
SEMIX353GB126HDS
Country
Germany
Sale of any product from the Semikron catalog at competitive prices

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Specifications SEMIX353GB126HDS

Product Attribute Attribute Value Search
Channel Type N
Collector Current 364 A
Collector to Emitter Shorted Voltage 1200 V
Collector to Emitter Voltage 1200 V
Configuration Dual
Continuous Collector Current 364 A
Dimensions 149.5 x 63.5 x 17 mm
Energy Rating 59 mJ
Gate Capacitance 16 nF
Gate to Emitter Voltage 20 V
Height 0.669" (17mm)
Length 5.885" (149.5mm)
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Mounting Type Screw
Number of Pins 20
Package Type SEMIX 3s
Polarity N-Channel
Primary Type Si
Product Header Trench N-Channel IGBT Module
Resistance, Thermal, Junction to Case 0.1 K/W
Series IGBT Series
Temperature Operating Range -40 to +150 °C
Transistor Type IGBT
Type Trench
Width 2.5" (63.5mm)
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