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Semikron SKM100GB125DN

Semikron SKM100GB125DN
Manufacturer
Semikron
Part number
SKM100GB125DN
Country
Germany
Sale of any product from the Semikron catalog at competitive prices

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Specifications SKM100GB125DN

Product Attribute Attribute Value Search
Channel Type N
Collector Current 100 A
Collector to Emitter Shorted Voltage 1200 V
Collector to Emitter Voltage 1200 V
Configuration Dual
Continuous Collector Current 100 A
Dimensions 94.5 x 34.5 x 28.8 mm
Energy Rating 12.5 mJ
Gate Capacitance 5 nF
Gate to Emitter Voltage ±20 V
Height 1.134" (28.8mm)
Length 3.72" (94.5mm)
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Mounting Type Screw
Number of Pins 7
Package Type D 93
Polarity N-Channel
Primary Type Si
Product Header Ultrafast N-Channel IGBT Module
Resistance, Thermal, Junction to Case 0.18 K/W
Series IGBT Series
Temperature Operating Range -40 to +150 °C
Transistor Type IGBT
Type Ultrafast
Width 1.358" (34.5mm)
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